aug2009.version3.0 magnachipsemiconductorltd . 1 MDP12N50nchannelmosfet500v absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 500 v gatesourcevoltage v gss 30 v t c =25 o c 11.5 a continuousdraincurrent( ) t c =100 o c i d 7.0 a pulseddraincurrent (1) i dm 46 a t c =25 o c 165 powerdissipation derateabove25 o c p d 1.33 w w/ o c peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 460 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c idlimitedbymaximumjunctiontemperature thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 62.5 thermalresistance,junctiontocase (1) r jc 0.75 o c/w MDP12N50 nchannelmosfet500v,11.5a,0.65 ? generaldescription the MDP12N50 uses advanced magnachips mosfet technology, which provides low onstate resistance, high switchingperformanceandexcellentquality. MDP12N50 is suitable device for smps, high speed switchingandgeneralpurposeapplications. features v ds =500v i d =11.5a @v gs =10v r ds(on) 0.65 @v gs =10v applications powersupply pfc highcurrent,highspeedswitching d g s
aug2009.version3.0 magnachipsemiconductorltd . 2 MDP12N50nchannelmosfet500v orderinginformation partnumber temp.range package packing rohsstatus MDP12N50th 55~150 o c to220 tube halogenfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 500 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 3.0 5.0 v draincutoffcurrent i dss v ds =500v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =5.75a 0.55 0.65 forwardtransconductance g fs v ds =30v,i d =5.75a 15 s dynamiccharacteristics totalgatecharge q g 22.7 gatesourcecharge q gs 7.7 gatedraincharge q gd v ds =400v,i d =11.5a,v gs =10v (3) 8.7 nc inputcapacitance c iss 1030 reversetransfercapacitance c rss 5 outputcapacitance c oss v ds =25v,v gs =0v,f=1.0mhz 121 pf turnondelaytime t d(on) 25 risetime t r 50 turnoffdelaytime t d(off) 40 falltime t f v gs =10v,v ds =250v,i d =11.5a, r g =25 (3) 30 ns drainsourcebodydiodecharacteristics maximumcontinuousdrainto sourcediodeforwardcurrent i s 11.5 a sourcedraindiodeforward voltage v sd i s =11.5a,v gs =0v 1.4 v bodydiodereverserecovery time t rr 310 ns bodydiodereverserecovery charge q rr i f =11.5a,dl/dt=100a/s (3) 2.6 c note: 1.pulsewidthisbasedonr jc &r ja andthemaximumallowedjunctiontemperatureof150 c. 2.pulsetest:pulsewidth 300us,dutycycle 2%,pulsewidthlimitedbyjunctiontemperaturet j(max) =150 c. 3. i sd 11.5a,di/dt 200a/us,v dd =50v,r g =25,startingt j =25 c 4.l=6.3mh, i as =11.5a, v dd =50v,r g =25,startingt j =25 c
aug2009.version3.0 magnachipsemiconductorltd . 3 MDP12N50nchannelmosfet500v fig. 5 transfercharacteristics fig.1onregioncharacteristics fig. 2 on resistancevariationwith draincurrentandgatevoltage fig. 3 on resistancevariationwith temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage variation with source current and temperature 0 5 10 15 20 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v gs =10.0v v gs =20v r ds(on) [ ] i d ,draincurrent[a] 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs =10v v gs =4.5v notes: 1.v gs =10v 2.i d =5a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 *notes; 1. v ds =5v 125 25 i d [a] v gs [v] 0.1 1 10 0.1 1 10 notes 1.250 ? pulsetest 2.t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 25 125 notes: 1.v gs =0v 2.i d =250 ? i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v]
aug2009.version3.0 magnachipsemiconductorltd . 4 MDP12N50nchannelmosfet500v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig. 10 maximum drain current v s. case temperature fig.11transientthermalresponsecurve fig .12 single pulse max imum power dissipation 0 2 4 6 8 10 12 14 16 18 20 22 24 0 2 4 6 8 10 100v 250v 400v note:i d =11.5a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc] 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 1e5 1e4 1e3 0.01 0.1 1 0 3000 6000 9000 12000 15000 singlepulse r thjc =0.75 /w t c =25 power(w) pulsewidth(s) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d ,draincurrent[a] t c ,casetemperature[ ] 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =0.75 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermalresponse t 1 ,rectangularpulseduration[sec] 0.1 1 10 0 200 400 600 800 1000 1200 1400 1600 1800 2000 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v]
aug2009.version3.0 magnachipsemiconductorltd . 5 MDP12N50nchannelmosfet500v to220,3l dimensionsareinmillimeters,unlessotherwisespe cified
aug2009.version3.0 magnachipsemiconductorltd . 6 MDP12N50nchannelmosfet500v worldwidesalessupportlocations u.s.a sunnyvaleoffice 787n.maryave.sunnyvale ca94085u.s.a tel:14086365200 fax:14082132450 email:usasales@magnachip.com u.k knyvetthousethecauseway, stainesmiddx,tw183ba,u.k. tel:+44(0)1784895000 fax:+44(0)1784895115 email:uksales@magnachip.com japan osakaoffice 3f,shinosakamt2bldg3536 miyaharayodogawaku osaka,5320003japan tel:81663949160 fax:81663949150 email:osakasales@magnachip.com taiwanr.o.c 2f,no.61,chowizestreet,neihu taipei,114taiwanr.o.c tel:886226577898 fax:886226578751 email:taiwansales@magnachip.com china hongkongoffice suite1024,oceancentre5cantonroad, tsimshatsuikowloon,hongkong tel:85228289700 fax:85228028183 email:chinasales@magnachip.com shenzhenoffice room2003b,20/f internationalchamberofcommercetower fuhuaroad3cbd,futiandistrict,china tel:8675588315561 fax:8675588315565 email:chinasales@magnachip.com shanghaioffice roome,8/f,liaosheninternationalbuilding1068 wuzhongroad,(c)201103 shanghai,china tel:862164051521 fax:862165051523 email:chinasales@magnachip.com korea 891,daechidong,kangnamgu seoul,135738korea tel:82269033451 fax:82269033668~9 email:koreasales@magnachip.com disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. \ magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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